AO4421 v ds i d (at v gs =-10v) -6.2a r ds(on) (at v gs =-10v) < 40m w r ds(on) (at v gs = -4.5v) < 50m w symbol v ds v gs i dm t j , t stg typ max 24 40 54 75 21 30 maximum junction-to-ambient a steady-state maximum junction-to-lead c steady-state power dissipation a t a =25c parameter maximum junction-to-ambient a t 10s r q jl c/w thermal characteristics v v c a w junction and storage temperature range -55 to 150 symbol r q ja units c/w c/w t a =25c i d -6.2 t a =70c -5 p d 3.1 t a =70c 2 parameter maximum units pulsed drain current b -40 drain-source voltage -60 gate-source voltage 20 continuous drain current a -60v the AO4421 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. absolute maximum ratings t a =25c unless otherwise noted g d s so8 www.freescale.net.cn 1/4 60v p-channel mosfet general description features
symbol min typ max units bv dss -60 v -1 t j =55c -5 i gss 100 na v gs(th) -1 -2 -3 v i d(on) -40 a 32 40 t j =125c 53 70 40 50 m w g fs 18 s v sd -0.74 -1 v i s -4.2 a c iss 2417 2900 pf c oss 179 pf c rss 120 pf r g 1.9 2.3 w q g (10v) 46.5 55 nc q g (4.5v) 22.7 nc q gs 9.1 nc q gd 9.2 nc t d(on) 9.8 ns t r 6.1 ns t d(off) 44 ns t f 12.7 ns t rr 34 42 ns q rr 47 nc maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =-30v, f=1mhz gate drain charge total gate charge (10v) v gs =-10v, v ds =-30v, i d =-6.2a turn-on rise time turn-off delaytime v gs =-10v, v ds =-30v, r l =4.7 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge (4.5v) gate source charge m w v gs =-4.5v, i d =-5a i s =-1a,v gs =0v v ds =-5v, i d =-6.2a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =-250 m a v ds =-48v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-6.2a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-6.2a reverse transfer capacitance i f =-6.2a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating i s based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 2/4 AO4421 60v p-channel mosfet
typical electrical and thermal characteristics: p-c hannel 0 5 10 15 20 25 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3v -6v -3.5v -4v -10v -4.5v -5v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 -v gs (volts) figure 2: transfer characteristics -i d (a) 30 35 40 45 0 5 10 15 20 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.80 1.00 1.20 1.40 1.60 1.80 2.00 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v i d =-6.2a v gs =-4.5v i d =-5a 20 30 40 50 60 70 80 90 100 2 3 4 5 6 7 8 9 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-6.2a 25c 125c www.freescale.net.cn 3/4 AO4421 60v p-channel mosfet
typical electrical and thermal characteristics: p-c hannel 0 2 4 6 8 10 0 10 20 30 40 50 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 0 10 20 30 40 50 60 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q q q q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c, t a =25c v ds =-30v i d =-6.2a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s www.freescale.net.cn 4/4 AO4421 60v p-channel mosfet
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